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Processes for Producing High-Quality SiC Powders
Silicon carbide (SiC) is an inorganic compound known for its exceptional properties. Naturally occurring SiC, known as moissanite, is quite rare. In industrial applications, silicon carbide is predominantly produced through synthetic methods.At Semicera Semiconductor, we leverage advanced techniq...Read more -
Control of radial resistivity uniformity during crystal pulling
The main reasons affecting the uniformity of radial resistivity of single crystals are the flatness of the solid-liquid interface and the small plane effect during crystal growth The influence of the flatness of the solid-liquid interface During crystal growth, if the melt is stirred evenly, the...Read more -
Why can magnetic field single crystal furnace improve the quality of single crystal
Since crucible is used as container and there is convection inside, as the size of generated single crystal increases, heat convection and temperature gradient uniformity become more difficult to control. By adding magnetic field to make the conductive melt act on Lorentz force, convection can be...Read more -
Rapid growth of SiC single crystals using CVD-SiC bulk source by sublimation method
Rapid Growth of SiC Single Crystal Using CVD-SiC Bulk Source via Sublimation MethodBy using recycled CVD-SiC blocks as the SiC source, SiC crystals were successfully grown at a rate of 1.46 mm/h through the PVT method. The grown crystal’s micropipe and dislocation densities indicate that de...Read more -
Optimized and Translated Content on Silicon Carbide Epitaxial Growth Equipment
Silicon carbide (SiC) substrates have numerous defects that prevent direct processing. To create chip wafers, a specific single-crystal film must be grown on the SiC substrate through an epitaxial process. This film is known as the epitaxial layer. Nearly all SiC devices are realized on epitaxial...Read more -
The Crucial Role and Application Cases of SiC-Coated Graphite Susceptors in Semiconductor Manufacturing
Semicera Semiconductor plans to increase the production of core components for semiconductor manufacturing equipment globally. By 2027, we aim to establish a new 20,000 square meter factory with a total investment of 70 million USD. One of our core components, the silicon carbide (SiC) wafer carr...Read more -
Why do we need to do epitaxy on silicon wafer substrates?
In the semiconductor industry chain, especially in the third-generation semiconductor (wide bandgap semiconductor) industry chain, there are substrates and epitaxial layers. What is the significance of the epitaxial layer? What is the difference between the substrate and the substrate? The substr...Read more -
Semiconductor Manufacturing Process – Etch Technology
Hundreds of processes are required to turn a wafer into a semiconductor. One of the most important processes is etching - that is, carving fine circuit patterns on the wafer. The success of the etching process depends on managing various variables within a set distribution range, and each etching...Read more -
Ideal Material for Focus Rings in Plasma Etching Equipment: Silicon Carbide (SiC)
In plasma etching equipment, ceramic components play a crucial role, including the focus ring. The focus ring, placed around the wafer and in direct contact with it, is essential for focusing the plasma onto the wafer by applying voltage to the ring. This enhances the un...Read more -
Front End of Line (FEOL): Laying the Foundation
The front end of the production line is like laying the foundation and building the walls of a house. In semiconductor manufacturing, this stage involves creating the basic structures and transistors on a silicon wafer. Key Steps of FEOL: ...Read more -
Effect of silicon carbide single crystal processing on wafer surface quality
Semiconductor power devices occupy a core position in power electronic systems, especially in the context of the rapid development of technologies such as artificial intelligence, 5G communications and new energy vehicles, the performance requirements for them have been ...Read more -
Key core material for SiC growth: Tantalum carbide coating
At present, the third generation of semiconductors is dominated by silicon carbide. In the cost structure of its devices, the substrate accounts for 47%, and the epitaxy accounts for 23%. The two together account for about 70%, which is the most important part of the silicon carbide device manufa...Read more