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  • Ideal Material for Focus Rings in Plasma Etching Equipment: Silicon Carbide (SiC)

    Ideal Material for Focus Rings in Plasma Etching Equipment: Silicon Carbide (SiC)

    In plasma etching equipment, ceramic components play a crucial role, including the focus ring. The focus ring, placed around the wafer and in direct contact with it, is essential for focusing the plasma onto the wafer by applying voltage to the ring. This enhances the un...
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  • Front End of Line (FEOL): Laying the Foundation

    The front end of the production line is like laying the foundation and building the walls of a house. In semiconductor manufacturing, this stage involves creating the basic structures and transistors on a silicon wafer. Key Steps of FEOL: ...
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  • Effect of silicon carbide single crystal processing on wafer surface quality

    Effect of silicon carbide single crystal processing on wafer surface quality

    Semiconductor power devices occupy a core position in power electronic systems, especially in the context of the rapid development of technologies such as artificial intelligence, 5G communications and new energy vehicles, the performance requirements for them have been ...
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  • Key core material for SiC growth: Tantalum carbide coating

    Key core material for SiC growth: Tantalum carbide coating

    At present, the third generation of semiconductors is dominated by silicon carbide. In the cost structure of its devices, the substrate accounts for 47%, and the epitaxy accounts for 23%. The two together account for about 70%, which is the most important part of the silicon carbide device manufa...
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  • How do tantalum carbide coated products enhance the corrosion resistance of materials?

    How do tantalum carbide coated products enhance the corrosion resistance of materials?

    Tantalum carbide coating is a commonly used surface treatment technology that can significantly improve the corrosion resistance of materials. Tantalum carbide coating can be attached to the surface of the substrate through different preparation methods, such as chemical vapor deposition, physica...
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  • Yesterday, the Science and Technology Innovation Board issued an announcement that Huazhuo Precision Technology terminated its IPO!

    Just announced the delivery of the first 8-inch SIC laser annealing equipment in China, which is also Tsinghua’s technology; Why did they withdraw the materials themselves? Just a few words: First, the products are too diverse! At first glance, I don’t know what they do. At present, H...
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  • CVD silicon carbide coating-2

    CVD silicon carbide coating-2

    CVD silicon carbide coating 1. Why is there a silicon carbide coating The epitaxial layer is a specific single crystal thin film grown on the basis of the wafer through the epitaxial process. The substrate wafer and the epitaxial thin film are collectively called epitaxial wafers. Among them, the...
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  • Preparation process of SIC coating

    Preparation process of SIC coating

    At present, the preparation methods of SiC coating mainly include gel-sol method, embedding method, brush coating method, plasma spraying method, chemical vapor reaction method (CVR) and chemical vapor deposition method (CVD). Embedding methodThis method is a kind of high-temperature solid-phase ...
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  • CVD Silicon Carbide Coating-1

    CVD Silicon Carbide Coating-1

    What is CVD SiC Chemical vapor deposition (CVD) is a vacuum deposition process used to produce high-purity solid materials. This process is often used in the semiconductor manufacturing field to form thin films on the surface of wafers. In the process of preparing SiC by CVD, the substrate is exp...
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  • Analysis of dislocation structure in SiC crystal by ray tracing simulation assisted by X-ray topological imaging

    Analysis of dislocation structure in SiC crystal by ray tracing simulation assisted by X-ray topological imaging

    Research background Application importance of silicon carbide (SiC): As a wide bandgap semiconductor material, silicon carbide has attracted much attention due to its excellent electrical properties (such as larger bandgap, higher electron saturation velocity and thermal conductivity). These prop...
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  • Seed crystal preparation process in SiC single crystal growth 3

    Seed crystal preparation process in SiC single crystal growth 3

    Growth VerificationThe silicon carbide (SiC) seed crystals were prepared following the outlined process and validated through SiC crystal growth. The growth platform used was a self-developed SiC induction growth furnace with a growth temperature of 2200℃, a growth pressure of 200 Pa, and a growt...
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  • Seed Crystal Preparation Process in SiC Single Crystal Growth (Part 2)

    Seed Crystal Preparation Process in SiC Single Crystal Growth (Part 2)

    2. Experimental Process 2.1 Curing of Adhesive FilmIt was observed that directly creating a carbon film or bonding with graphite paper on SiC wafers coated with adhesive led to several issues: 1. Under vacuum conditions, the adhesive film on SiC wafers developed a scalelike appearance due to sign...
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