Wafer Cassette

Short Description:

Wafer Cassette – Precision-engineered for the safe handling and storage of semiconductor wafers, ensuring optimal protection and cleanliness throughout the manufacturing process.


Product Detail

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Semicera’s Wafer Cassette is a critical component in the semiconductor manufacturing process, designed to securely hold and transport delicate semiconductor wafers. The Wafer Cassette provides exceptional protection, ensuring that each wafer is kept free from contaminants and physical damage during handling, storage, and transportation.

Constructed with high-purity, chemical-resistant materials, the Semicera Wafer Cassette guarantees the highest levels of cleanliness and durability, essential for maintaining the integrity of wafers at every stage of production. The precision engineering of these cassettes allows for seamless integration with automated handling systems, minimizing the risk of contamination and mechanical damage.

The design of the Wafer Cassette also supports optimal airflow and temperature control, which is crucial for processes that require specific environmental conditions. Whether used in cleanrooms or during thermal processing, the Semicera Wafer Cassette is engineered to meet the stringent demands of the semiconductor industry, providing reliable and consistent performance to enhance manufacturing efficiency and product quality.

Items

Production

Research

Dummy

Crystal Parameters

Polytype

4H

Surface orientation error

<11-20 >4±0.15°

Electrical Parameters

Dopant

n-type Nitrogen

Resistivity

0.015-0.025ohm·cm

Mechanical Parameters

Diameter

150.0±0.2mm

Thickness

350±25 μm

Primary flat orientation

[1-100]±5°

Primary flat length

47.5±1.5mm

Secondary flat

None

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Bow

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Structure

Micropipe density

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metal impurities

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Front Quality

Front

Si

Surface finish

Si-face CMP

Particles

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Cumulative length ≤Diameter

Cumulative length≤2*Diameter

NA

Orange peel/pits/stains/striations/ cracks/contamination

None

NA

Edge chips/indents/fracture/hex plates

None

Polytype areas

None

Cumulative area≤20%

Cumulative area≤30%

Front laser marking

None

Back Quality

Back finish

C-face CMP

Scratches

≤5ea/mm,Cumulative length≤2*Diameter

NA

Back defects (edge chips/indents)

None

Back roughness

Ra≤0.2nm (5μm*5μm)

Back laser marking

1 mm (from top edge)

Edge

Edge

Chamfer

Packaging

Packaging

Epi-ready with vacuum packaging

Multi-wafer cassette packaging

*Notes: "NA" means no request Items not mentioned may refer to SEMI-STD.

tech_1_2_size
SiC wafers

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