Semicera introduces the Wafer Cassette Carrier, a critical solution for the secure and efficient handling of semiconductor wafers. This carrier is engineered to meet the stringent requirements of the semiconductor industry, ensuring the protection and integrity of your wafers throughout the manufacturing process.
Key Features:
• Robust Construction: The Wafer Cassette Carrier is built from high-quality, durable materials that withstand the rigors of semiconductor environments, providing reliable protection against contamination and physical damage.
• Precise Alignment: Designed for precise wafer alignment, this carrier ensures that wafers are securely held in place, minimizing the risk of misalignment or damage during transport.
• Easy Handling: Ergonomically designed for ease of use, the carrier simplifies the loading and unloading process, improving workflow efficiency in cleanroom environments.
• Compatibility: Compatible with a wide range of wafer sizes and types, making it versatile for various semiconductor manufacturing needs.
Experience unparalleled protection and convenience with Semicera’s Wafer Cassette Carrier. Our carrier is designed to meet the highest standards of semiconductor manufacturing, ensuring your wafers remain in pristine condition from start to finish. Trust Semicera to deliver the quality and reliability you need for your most critical processes.
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Items |
Production |
Research |
Dummy |
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Crystal Parameters |
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Polytype |
4H |
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Surface orientation error |
<11-20 >4±0.15° |
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Electrical Parameters |
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Dopant |
n-type Nitrogen |
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Resistivity |
0.015-0.025ohm·cm |
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Mechanical Parameters |
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Diameter |
150.0±0.2mm |
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Thickness |
350±25 μm |
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Primary flat orientation |
[1-100]±5° |
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Primary flat length |
47.5±1.5mm |
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Secondary flat |
None |
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TTV |
≤5 μm |
≤10 μm |
≤15 μm |
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LTV |
≤3 μm(5mm*5mm) |
≤5 μm(5mm*5mm) |
≤10 μm(5mm*5mm) |
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Bow |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
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Warp |
≤35 μm |
≤45 μm |
≤55 μm |
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Front(Si-face) roughness(AFM) |
Ra≤0.2nm (5μm*5μm) |
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Structure |
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Micropipe density |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
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Metal impurities |
≤5E10atoms/cm2 |
NA |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
NA |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
NA |
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Front Quality |
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Front |
Si |
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Surface finish |
Si-face CMP |
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Particles |
≤60ea/wafer (size≥0.3μm) |
NA |
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Scratches |
≤5ea/mm. Cumulative length ≤Diameter |
Cumulative length≤2*Diameter |
NA |
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Orange peel/pits/stains/striations/ cracks/contamination |
None |
NA |
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Edge chips/indents/fracture/hex plates |
None |
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Polytype areas |
None |
Cumulative area≤20% |
Cumulative area≤30% |
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Front laser marking |
None |
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Back Quality |
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Back finish |
C-face CMP |
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Scratches |
≤5ea/mm,Cumulative length≤2*Diameter |
NA |
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Back defects (edge chips/indents) |
None |
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Back roughness |
Ra≤0.2nm (5μm*5μm) |
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Back laser marking |
1 mm (from top edge) |
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Edge |
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Edge |
Chamfer |
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Packaging |
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Packaging |
Epi-ready with vacuum packaging Multi-wafer cassette packaging |
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*Notes： "NA" means no request Items not mentioned may refer to SEMI-STD. |
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