Wafer Carriers with Silicon Carbide (SiC) Coating

Short Description:

Wafer carrier with silicon carbide (SiC) coating is a substrate used in semiconductor manufacturing. It is characterized by a layer of silicon carbide material coated on the surface of the wafer carrier. Silicon carbide has excellent thermal conductivity and high temperature resistance, making it an ideal material for thermal management in semiconductor processes.


Product Detail

Product Tags

Description

CVD-SiC coating has the characteristics of uniform structure, compact material, high temperature resistance, oxidation resistance, high purity, acid&alkali resistance and organic reagent, with stable physical and chemical properties.
 
Compared with high-purity graphite materials, graphite begins to oxidize at 400C, which will cause a loss of powder due to oxidation, resulting in environmental pollution to peripheral devices and vacuum chambers, and increase impurities of high-purity environment.
 However, SiC coating can maintain physical and chemical stability at 1600 degrees, It is widely used in modern industry, especially in semiconductor industry.

SiC coated wafer carriers have the following advantages:

1. High thermal conductivity: Silicon carbide has high thermal conductivity and can effectively conduct the generated heat from the wafer to the surrounding environment, improving the thermal management efficiency of the process.

2. High temperature resistance: SiC materials can maintain structural stability and mechanical strength in high temperature environments, and are suitable for semiconductor processes with high temperature processing.

3. Chemical inertness: SiC has high resistance to chemical corrosion and oxidation, and can protect wafer carriers from corrosive gases and chemicals.

4. Surface flatness: SiC coatings can provide a uniform and flat surface, which helps with the precise positioning and stability of wafers.

These characteristics make wafer carriers with silicon carbide coatings widely used in high-temperature processes, power semiconductors, and other applications that require high thermal conductivity and high temperature resistance.

Main Features

1 .High purity SiC coated graphite

2. Superior heat resistance & thermal uniformity

3. Fine SiC crystal coated for a smooth surface

4. High durability against chemical cleaning

Main Specifications of CVD-SIC Coatings:

SiC-CVD
Density (g/cc) 3.21
Flexural strength (Mpa) 470
Thermal expansion (10-6/K) 4
Thermal conductivity (W/mK) 300

Packing and Shipping

Supply Ability:
10000 Piece/Pieces per Month
Packaging & Delivery:
Packing:Standard & Strong Packing
Poly bag + Box + Carton + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lead Time:

Quantity(Pieces) 1 – 1000 >1000
Est. Time(days) 15 To be negotiated
Semicera Work place
Semicera work place 2
Equipment machine
CNN processing, chemical cleaning, CVD coating
Semicera Ware House
Our service

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