Wafer Boat

Short Description:

Wafer boats are key components in the semiconductor manufacturing process. Semiera is able to provide wafer boats that are specially designed and produced for diffusion processes, which play a vital role in the manufacture of high integrated circuits. We are firmly committed to providing the highest quality products at competitive prices and look forward to becoming your long-term partner in China.

Send email to us

Product Detail

Product Tags

Advantages

High temperature oxidation resistance
Excellent Corrosion resistance
Good Abrasion resistance
High coefficient of heat conductivity
Self-lubricity, low density
High hardness
Customized design.

Applications

-Wear-resistant Field: bushing, plate, sandblasting nozzle,cyclone lining, grinding barrel,etc...
-High Temperature Field: siC Slab, Quenching Furnace Tube,Radiant Tube,crucible,Heating Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC boat,Kiln car Structure,Setter,etc.
-Silicon Carbide Semiconductor: SiC wafer boat, sic chuck,sic paddle, sic cassette, sic diffusion tube, wafer fork, suction plate, guideway,etc.
-Silicon Carbide Seal Field: all kinds of sealing ring, bearing, bushing, etc.
-Photovoltaic Field: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller,etc.
-Lithium Battery Field

WAFER (1)

WAFER (2)

Physical Properties Of SiC

Property	Value	Method
Density	3.21 g/cc	Sink-float and dimension
Specific heat	0.66 J/g °K	Pulsed laser flash
Flexural strength	450 MPa560 MPa	4 point bend, RT4 point bend, 1300°
Fracture toughness	2.94 MPa m1/2	Microindentation
Hardness	2800	Vicker’s, 500g load
Elastic ModulusYoung’s Modulus	450 GPa430 GPa	4 pt bend, RT4 pt bend, 1300 °C
Grain size	2 – 10 µm	SEM

Thermal Properties Of SiC

Thermal Conductivity	250 W/m °K	Laser flash method, RT
Thermal Expansion (CTE)	4.5 x 10-6 °K	Room temp to 950 °C, silica dilatometer

Technical Parameters

Item	Unit	Data
Item	Unit	RBSiC(SiSiC)	NBSiC	SSiC	RSiC	OSiC
SiC content	%	85	75	99	99.9	≥99
Free silicon content	%	15	0	0	0	0
Max service temperature	℃	1380	1450	1650	1620	1400
Density	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
Open porosity	%	0	13-15	0	15-18	7-8
Bending strength 20℃	Мpa	250	160	380	100	/
Bending strength 1200℃	Мpa	280	180	400	120	/
Modulus of elasticity 20℃	Gpa	330	580	420	240	/
Modulus of elasticity 1200℃	Gpa	300	/	/	200	/
Thermal conductivity 1200℃	W/m.K	45	19.6	100-120	36.6	/
Coefficient of thermal expansion	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

The CVD silicon carbide coating on the outer surface of recrystallized silicon carbide ceramic products can reach a purity of more than 99.9999% to meet the needs of customers in the semiconductor industry.