Semicera provides specialized tantalum carbide (TaC) coatings for various components and carriers. Semicera leading coating process enables tantalum carbide (TaC) coatings to achieve high purity, high temperature stability and high chemical tolerance, improving product quality of SIC/GAN crystals and EPI layers (Graphite coated TaC susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.
Graphite is an excellent high-temperature material, but it oxidizes easily at high temperatures. Even in vacuum furnaces with inert gas, it can still undergo slow oxidation. Using a CVD tantalum carbide (TaC) coating can effectively protect the graphite substrate, providing the same high-temperature resistance as graphite. TaC is also an inert material, meaning it will not react with gases such as argon or hydrogen at high temperatures. Inquiry Tantalum Carbide CVD Coating EPI Susceptor now!
After years of development, Semicera has conquered the technology of CVD TaC with the joint efforts of the R&D department. Defects are easy to occur in the growth process of SiC wafers, but after using TaC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Simicera' parts for single crystal growth.
with and without TaC
After using TaC (right)
Moreover, Semicera's TaC-coated products exhibit a longer service life and greater high-temperature resistance compared to SiC coatings. Laboratory measurements have demonstrated that our TaC coatings can consistently perform at temperatures up to 2300 degrees Celsius for extended periods. Below are some examples of our samples:
