Silicon Wafer

Short Description:

Semicera Silicon Wafers are the cornerstone of modern semiconductor devices, offering unmatched purity and precision. Designed to meet the stringent demands of high-tech industries, these wafers ensure reliable performance and consistent quality. Trust Semicera for your cutting-edge electronic applications and innovative technology solutions.


Product Detail

Product Tags

Semicera Silicon Wafers are meticulously crafted to serve as the foundation for a wide array of semiconductor devices, from microprocessors to photovoltaic cells. These wafers are engineered with high precision and purity, ensuring optimal performance in various electronic applications.

Manufactured using advanced techniques, Semicera Silicon Wafers exhibit exceptional flatness and uniformity, which are crucial for achieving high yields in semiconductor fabrication. This level of precision helps in minimizing defects and improving the overall efficiency of electronic components.

The superior quality of Semicera Silicon Wafers is evident in their electrical characteristics, which contribute to the enhanced performance of semiconductor devices. With low impurity levels and high crystal quality, these wafers provide the ideal platform for developing high-performance electronics.

Available in various sizes and specifications, Semicera Silicon Wafers can be tailored to meet the specific needs of different industries, including computing, telecommunications, and renewable energy. Whether for large-scale manufacturing or specialized research, these wafers deliver reliable results.

Semicera is committed to supporting the growth and innovation of the semiconductor industry by providing high-quality silicon wafers that meet the highest industry standards. With a focus on precision and reliability, Semicera enables manufacturers to push the boundaries of technology, ensuring their products stay at the forefront of the market.

Items

Production

Research

Dummy

Crystal Parameters

Polytype

4H

Surface orientation error

<11-20 >4±0.15°

Electrical Parameters

Dopant

n-type Nitrogen

Resistivity

0.015-0.025ohm·cm

Mechanical Parameters

Diameter

150.0±0.2mm

Thickness

350±25 μm

Primary flat orientation

[1-100]±5°

Primary flat length

47.5±1.5mm

Secondary flat

None

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Bow

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Structure

Micropipe density

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metal impurities

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Front Quality

Front

Si

Surface finish

Si-face CMP

Particles

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Cumulative length ≤Diameter

Cumulative length≤2*Diameter

NA

Orange peel/pits/stains/striations/ cracks/contamination

None

NA

Edge chips/indents/fracture/hex plates

None

Polytype areas

None

Cumulative area≤20%

Cumulative area≤30%

Front laser marking

None

Back Quality

Back finish

C-face CMP

Scratches

≤5ea/mm,Cumulative length≤2*Diameter

NA

Back defects (edge chips/indents)

None

Back roughness

Ra≤0.2nm (5μm*5μm)

Back laser marking

1 mm (from top edge)

Edge

Edge

Chamfer

Packaging

Packaging

Epi-ready with vacuum packaging

Multi-wafer cassette packaging

*Notes: "NA" means no request Items not mentioned may refer to SEMI-STD.

tech_1_2_size
SiC wafers

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