Semicera Silicon Substrates are crafted to meet the rigorous demands of the semiconductor industry, offering unparalleled quality and precision. These substrates provide a reliable foundation for various applications, from integrated circuits to photovoltaic cells, ensuring optimal performance and longevity.
The high purity of Semicera Silicon Substrates ensures minimal defects and superior electrical characteristics, which are critical for the production of high-efficiency electronic components. This level of purity helps in reducing energy loss and improving the overall efficiency of semiconductor devices.
Semicera employs state-of-the-art manufacturing techniques to produce silicon substrates with exceptional uniformity and flatness. This precision is essential for achieving consistent results in semiconductor fabrication, where even the slightest variation can impact device performance and yield.
Available in a variety of sizes and specifications, Semicera Silicon Substrates cater to a wide range of industrial needs. Whether you are developing cutting-edge microprocessors or solar panels, these substrates provide the flexibility and reliability required for your specific application.
Semicera is dedicated to supporting innovation and efficiency in the semiconductor industry. By providing high-quality silicon substrates, we enable manufacturers to push the boundaries of technology, delivering products that meet the evolving demands of the market. Trust Semicera for your next-generation electronic and photovoltaic solutions.
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Items |
Production |
Research |
Dummy |
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Crystal Parameters |
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Polytype |
4H |
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Surface orientation error |
<11-20 >4±0.15° |
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Electrical Parameters |
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Dopant |
n-type Nitrogen |
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Resistivity |
0.015-0.025ohm·cm |
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Mechanical Parameters |
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Diameter |
150.0±0.2mm |
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Thickness |
350±25 μm |
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Primary flat orientation |
[1-100]±5° |
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Primary flat length |
47.5±1.5mm |
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Secondary flat |
None |
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TTV |
≤5 μm |
≤10 μm |
≤15 μm |
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LTV |
≤3 μm(5mm*5mm) |
≤5 μm(5mm*5mm) |
≤10 μm(5mm*5mm) |
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Bow |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
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Warp |
≤35 μm |
≤45 μm |
≤55 μm |
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Front(Si-face) roughness(AFM) |
Ra≤0.2nm (5μm*5μm) |
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Structure |
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Micropipe density |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
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Metal impurities |
≤5E10atoms/cm2 |
NA |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
NA |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
NA |
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Front Quality |
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Front |
Si |
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Surface finish |
Si-face CMP |
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Particles |
≤60ea/wafer (size≥0.3μm) |
NA |
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Scratches |
≤5ea/mm. Cumulative length ≤Diameter |
Cumulative length≤2*Diameter |
NA |
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Orange peel/pits/stains/striations/ cracks/contamination |
None |
NA |
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Edge chips/indents/fracture/hex plates |
None |
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Polytype areas |
None |
Cumulative area≤20% |
Cumulative area≤30% |
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Front laser marking |
None |
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Back Quality |
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Back finish |
C-face CMP |
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Scratches |
≤5ea/mm,Cumulative length≤2*Diameter |
NA |
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Back defects (edge chips/indents) |
None |
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Back roughness |
Ra≤0.2nm (5μm*5μm) |
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Back laser marking |
1 mm (from top edge) |
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Edge |
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Edge |
Chamfer |
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Packaging |
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Packaging |
Epi-ready with vacuum packaging Multi-wafer cassette packaging |
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*Notes： "NA" means no request Items not mentioned may refer to SEMI-STD. |
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