Silicon Carbide Substrates|SiC Wafers

Short Description:

Semicera Energy Technology Co., Ltd. is a leading supplier specializing in wafer and advanced semiconductor consumables. We are dedicated to providing high-quality, reliable, and innovative products to semiconductor manufacturing, photovoltaic industry and other related fields.

Our product line includes SiC/TaC coated graphite products and ceramic products, encompassing various materials such as silicon carbide, silicon nitride, and aluminum oxide and etc.

At present,we are the only manufacturer to provide purity 99.9999% SiC coating and 99.9% recrystallized silicon carbide. The max SiC coating length we can do 2640mm.

Send email to us

Product Detail

Product Tags

Silicon carbide (SiC) single crystal material has a large band gap width (~Si 3 times), high thermal conductivity (~Si 3.3 times or GaAs 10 times), high electron saturation migration rate (~Si 2.5 times), high breakdown electric field (~Si 10 times or GaAs 5 times) and other outstanding characteristics.

SiC devices have irreplaceable advantages in the field of high temperature, high pressure, high frequency, high power electronic devices and extreme environmental applications such as aerospace, military, nuclear energy, etc., make up for the defects of traditional semiconductor material devices in practical applications, and are gradually becoming the mainstream of power semiconductors.

4H-SiC Silicon carbide substrate specifications

Item项目	Specifications参数
Polytype 晶型	4H -SiC	6H- SiC
Diameter 晶圆直径	2 inch \| 3 inch \| 4 inch \| 6inch	2 inch \| 3 inch \| 4 inch \| 6inch
Thickness 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
Conductivity 导电类型	N – type / Semi-insulating N型导电片 / 半绝缘片	N – type / Semi-insulating N型导电片 / 半绝缘片
Dopant 掺杂剂	N2 ( Nitrogen )V ( Vanadium )	N2 ( Nitrogen ) V ( Vanadium )
Orientation 晶向	On axis <0001> Off axis <0001> off 4°	On axis <0001> Off axis <0001> off 4°
Resistivity 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
Micropipe Density(MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Bow / Warp 翘曲度	≤25 μm	≤25 μm
Surface 表面处理	DSP/SSP	DSP/SSP
Grade 产品等级	Production / Research grade	Production / Research grade
Crystal Stacking Sequence 堆积方式	ABCB	ABCABC
Lattice parameter 晶格参数	a=3.076A , c=10.053A	a=3.073A , c=15.117A
Eg/eV(Band-gap) 禁带宽度	3.27 eV	3.02 eV
ε(Dielectric Constant) 介电常数	9.6	9.66
Refraction Index 折射率	n0 =2.719 ne =2.777	n0 =2.707 , ne =2.755

6H-SiC Silicon Carbide substrate specifications

Item项目	Specifications参数
Polytype 晶型	6H-SiC
Diameter 晶圆直径	4 inch \| 6inch
Thickness 厚度	350μm ~ 450μm
Conductivity 导电类型	N – type / Semi-insulating N型导电片 / 半绝缘片
Dopant 掺杂剂	N2( Nitrogen ) V ( Vanadium )
Orientation 晶向	<0001> off 4°± 0.5°
Resistivity 电阻率	0.02 ~ 0.1 ohm-cm (6H-N Type)
Micropipe Density(MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤ 15 μm
Bow / Warp 翘曲度	≤25 μm
Surface 表面处理	Si Face: CMP, Epi-Ready C Face: Optical Polish
Grade 产品等级	Research grade