Silicon Carbide (SiC) Wafer Susceptors for MOCVD

Short Description:

Silicon Carbide (SiC) wafer susceptor is one of the key components used in the Metal Organic Chemical Vapor Deposition (MOCVD) process. Its main role is to monitor and control key parameters in the MOCVD process to ensure the growth quality and uniformity of the thin film.


Product Detail

Product Tags

Description

CVD-SiC coating has the characteristics of uniform structure, compact material, high temperature resistance, oxidation resistance, high purity, acid&alkali resistance and organic reagent, with stable physical and chemical properties.
 
Compared with high-purity graphite materials, graphite begins to oxidize at 400C, which will cause a loss of powder due to oxidation, resulting in environmental pollution to peripheral devices and vacuum chambers, and increase impurities of high-purity environment.
 However, SiC coating can maintain physical and chemical stability at 1600 degrees, It is widely used in modern industry, especially in semiconductor industry.

The characteristics of SiC wafer sensors are as follows:

1. High temperature stability: SiC has excellent high temperature stability and corrosion resistance, can operate stably for a long time in a high temperature environment, and is suitable for high temperature conditions in the MOCVD process.

2. High sensitivity: SiC sensors are highly sensitive and responsive to key parameters such as temperature, pressure and gas flow, and can accurately sense changes in the process and provide accurate feedback.

3. High precision: SiC wafer sensors can provide accurate measurement results to ensure the stability and consistency of the MOCVD process.

4. Chemical corrosion resistance: SiC materials have high resistance to common chemical corrosion products and can work reliably for a long time in an environment with corrosive gases and chemicals.

SiC wafer sensors are widely used and can be used to monitor parameters such as temperature gradients, gas flow rates and pressure changes in the MOCVD process to achieve high-quality and uniform film growth. They are particularly suitable for the production of high-performance semiconductor devices and optoelectronic devices.

Main Features

1 .High purity SiC coated graphite

2. Superior heat resistance & thermal uniformity

3. Fine SiC crystal coated for a smooth surface

4. High durability against chemical cleaning

Main Specifications of CVD-SIC Coatings:

SiC-CVD
Density (g/cc) 3.21
Flexural strength (Mpa) 470
Thermal expansion (10-6/K) 4
Thermal conductivity (W/mK) 300

Packing and Shipping

Supply Ability:
10000 Piece/Pieces per Month
Packaging & Delivery:
Packing:Standard & Strong Packing
Poly bag + Box + Carton + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lead Time:

Quantity(Pieces) 1 – 1000 >1000
Est. Time(days) 15 To be negotiated
Semicera Work place
Semicera work place 2
Equipment machine
CNN processing, chemical cleaning, CVD coating
Semicera Ware House
Our service

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