The Semicera SiC Cantilever Wafer Paddle is designed to meet the demands of modern semiconductor manufacturing. This wafer paddle offers excellent mechanical strength and thermal resistance, which is critical for handling wafers in high-temperature environments.
The SiC cantilever design enables precise wafer placement, reducing the risk of damage during handling. Its high thermal conductivity ensures that the wafer remains stable even under extreme conditions, which is critical for maintaining production efficiency.
In addition to its structural advantages, Semicera's SiC Cantilever Wafer Paddle also offers advantages in weight and durability. The lightweight construction makes it easier to handle and integrate into existing systems, while the high-density SiC material ensures long-lasting durability under demanding conditions.
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Physical properties of Recrystallized Silicon Carbide |
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Property |
Typical Value |
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Working temperature (°C) |
1600°C (with oxygen), 1700°C (reducing environment) |
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SiC content |
> 99.96% |
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Free Si content |
< 0.1% |
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Bulk density |
2.60-2.70 g/cm3 |
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Apparent porosity |
< 16% |
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Compression strength |
> 600 MPa |
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Cold bending strength |
80-90 MPa (20°C) |
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Hot bending strength |
90-100 MPa (1400°C) |
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Thermal expansion @1500°C |
4.70 10-6/°C |
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Thermal conductivity @1200°C |
23 W/m•K |
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Elastic modulus |
240 GPa |
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Thermal shock resistance |
Extremely good |
