Description
The Silicon Carbide Disc for MOCVD from semicera, a high-performance solution designed for optimal efficiency in epitaxial growth processes. The semicera Silicon Carbide Disc offers exceptional thermal stability and precision, making it an essential component in Si Epitaxy and SiC Epitaxy processes. Engineered to withstand the high temperatures and demanding conditions of MOCVD applications, this disc ensures reliable performance and longevity.
Our Silicon Carbide Disc is compatible with a wide range of MOCVD setups, including MOCVD Susceptor systems, and supports advanced processes such as GaN on SiC Epitaxy. It also integrates smoothly with PSS Etching Carrier, ICP Etching Carrier, and RTP Carrier systems, enhancing the precision and quality of your manufacturing output. Whether used for Monocrystalline Silicon production or LED Epitaxial Susceptor applications, this disc ensures exceptional results.
Additionally, semicera's Silicon Carbide Disc is adaptable to various configurations, including Pancake Susceptor and Barrel Susceptor setups, offering flexibility in diverse manufacturing environments. The inclusion of Photovoltaic Parts further extends its application to solar energy industries, making it a versatile and indispensable component for modern epitaxial growth and semiconductor manufacturing.
Main Features
1 .High purity SiC coated graphite
2. Superior heat resistance & thermal uniformity
3. Fine SiC crystal coated for a smooth surface
4. High durability against chemical cleaning
Main Specifications of CVD-SIC Coatings:
SiC-CVD | ||
Density | (g/cc) | 3.21 |
Flexural strength | (Mpa) | 470 |
Thermal expansion | (10-6/K) | 4 |
Thermal conductivity | (W/mK) | 300 |
Packing and Shipping
Supply Ability:
10000 Piece/Pieces per Month
Packaging & Delivery:
Packing:Standard & Strong Packing
Poly bag + Box + Carton + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lead Time:
Quantity(Pieces) |
1-1000 |
>1000 |
Est. Time(days) | 30 | To be negotiated |