Semicera's self-developed SiC Ceramic Seal Part is designed to meet the high standards of modern semiconductor manufacturing. This sealing part uses high-performance silicon carbide (SiC) material with excellent wear resistance and chemical stability to ensure excellent sealing performance in extreme environments. Combined with aluminum oxide (Al2O3) and silicon nitride (Si3N4), this part performs well in high-temperature applications and can effectively prevent gas and liquid leakage.
When used in conjunction with equipment such as wafer boats and wafer carriers, Semicera's SiC Ceramic Seal Part can significantly improve the efficiency and reliability of the overall system. Its superior temperature resistance and corrosion resistance make it an indispensable component in high-precision semiconductor manufacturing, ensuring stability and safety during the production process.
In addition, the design of this sealing part has been carefully optimized to ensure compatibility with a variety of equipment, making it easy to use in different production lines. Semicera's R&D team continues to work hard to promote technological innovation to ensure the competitiveness of its products in the industry.
Choosing Semicera's SiC Ceramic Seal Part, you will get a combination of high performance and reliability, helping you achieve more efficient production processes and excellent product quality. Semicera is always committed to providing customers with the best semiconductor solutions and services to promote the continuous development and progress of the industry.
✓Top-quality in China market
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✓Custom services
Epitaxy Growth Susceptor
Silicon/silicon carbide wafers need to go through multiple processes to be used in electronic devices. An important process is silicon/sic epitaxy, in which silicon/sic wafers are carried on a graphite base. Special advantages of Semicera's silicon carbide-coated graphite base include extremely high purity, uniform coating, and extremely long service life. They also have high chemical resistance and thermal stability.
LED Chip Production
During the extensive coating of the MOCVD reactor, the planetary base or carrier moves the substrate wafer. The performance of the base material has a great influence on the coating quality, which in turn affects the scrap rate of the chip. Semicera's silicon carbide-coated base increases the manufacturing efficiency of high-quality LED wafers and minimizes wavelength deviation. We also supply additional graphite components for all MOCVD reactors currently in use. We can coat almost any component with a silicon carbide coating, even if the component diameter is up to 1.5M, we can still coat with silicon carbide.
Semiconductor Field, Oxidation Diffusion Process, Etc.
In the semiconductor process, the oxidation expansion process requires high product purity, and at Semicera we offer custom and CVD coating services for the majority of silicon carbide parts.
The following picture shows the rough-processed silicon carbide slurry of Semicea and the silicon carbide furnace tube that is cleaned in the 1000-level dust-free room. Our workers are working before coating. The purity of our silicon carbide can reach 99.99%, and the purity of sic coating is greater than 99.99995%.