SiC ceramic crucibles

Short Description:

The Silicon Carbide Crucible is made of MSE PRO engineered silicon carbide ceramics, formed by isostatic pressing and pressureless sintering. Round, square crucibles, flat bottom, semi-flat bottom and spherical bottom can be made, and can also be processed with flanges, drilling, etc.


Product Detail

Product Tags

Silicon carbide ceramic crucible is made of silicon carbide material and is a commonly used high-temperature container. Silicon carbide ceramic crucible has excellent high-temperature stability, excellent corrosion resistance and low thermal expansion coefficient, which enables it to withstand extreme thermal stress and chemical erosion in high-temperature environments. It is used for sample accommodation and processing in experiments or industrial processes such as melting, sintering, heat treatment and chemical reactions under high-temperature conditions.

Our silicon carbide crucible is fabricated by high purity isostatic pressing and has good thermal conductivity and high temperature resistance. In the process of high temperature use, the coefficient of thermal expansion is small, and it has a certain strain resistance to acute heating and acute cooling. It has strong corrosion resistance to acid and alkali solution and excellent chemical stability. The specific model can be customized by drawing and sample, and the material is domestic graphite and imported graphite to meet the different needs of customers.

The main raw materials of graphite crucible are graphite, silicon carbide, silica, refractory clay, pitch, and tar, etc.
>High Pure Graphite Crucible
>Isostatic Graphite Crucible
>Silicon Carbide Graphite Crucible 
>Silicon Carbide Crucible
>Clay Graphite Crucible
>Quarts Crucible

SiC Crucible (5)
SiC Crucible (3)

 Features:
1. Long working life time
2. High thermal conductivity
3. New-style materials
4. Resistance to corrosion
5. Resistance to oxidation
6. High-strength
7. Multi-function

Technical Data of Material

Index

Unit

Standard value

Test value

Temperature Resistance

1650℃

1800℃

Chemical Composition
(%)

C

35~45

45

SiC

15~25

25

AL2O3

10~20

25

SiO2

20~25

5

Apparent Porosity

%

≤30%

≤28%

Compressive Strength

Mpa

≥8.5MPa

≥8.5MPa

Bulk Density

g/cm3

≥1.75

1.78

Our silicon carbide crucible is isostatic forming, which can use 23 times in furnace, while others only can use 12 times


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