Silicon carbide (SiC) is an inorganic compound known for its exceptional properties. Naturally occurring SiC, known as moissanite, is quite rare. In industrial applications, silicon carbide is predominantly produced through synthetic methods.
At Semicera Semiconductor, we leverage advanced techniques to manufacture high-quality SiC powders.
Our methods include:
Acheson Method: This traditional carbothermal reduction process involves mixing high-purity quartz sand or crushed quartz ore with petroleum coke, graphite, or anthracite powder. This mixture is then heated to temperatures exceeding 2000°C using a graphite electrode, resulting in the synthesis of α-SiC powder.
Low-Temperature Carbothermal Reduction: By combining silica fine powder with carbon powder and conducting the reaction at 1500 to 1800°C, we produce β-SiC powder with enhanced purity. This technique, similar to the Acheson method but at lower temperatures, yields β-SiC with a distinctive crystal structure. However, post-processing to remove residual carbon and silicon dioxide is necessary.
Silicon-Carbon Direct Reaction: This method involves directly reacting metal silicon powder with carbon powder at 1000-1400°C to produce high-purity β-SiC powder. α-SiC powder remains a key raw material for silicon carbide ceramics, while β-SiC, with its diamond-like structure, is ideal for precision grinding and polishing applications.
Silicon carbide exhibits two main crystal forms: α and β. β-SiC, with its cubic crystal system, features a face-centered cubic lattice for both silicon and carbon. In contrast, α-SiC includes various polytypes such as 4H, 15R, and 6H, with 6H being the most commonly used in industry. Temperature affects the stability of these polytypes: β-SiC is stable below 1600°C, but above this temperature, it gradually transitions to α-SiC polytypes. For instance, 4H-SiC forms around 2000°C, while 15R and 6H polytypes require temperatures above 2100°C. Notably, 6H-SiC remains stable even at temperatures exceeding 2200°C.
At Semicera Semiconductor, we are dedicated to advancing SiC technology. Our expertise in SiC coating and materials ensures top-notch quality and performance for your semiconductor applications. Explore how our cutting-edge solutions can enhance your processes and products.
Post time: Jul-26-2024