News

  • The Crucial Role and Application Cases of SiC-Coated Graphite Susceptors in Semiconductor Manufacturing

    The Crucial Role and Application Cases of SiC-Coated Graphite Susceptors in Semiconductor Manufacturing

    Semicera Semiconductor plans to increase the production of core components for semiconductor manufacturing equipment globally. By 2027, we aim to establish a new 20,000 square meter factory with a total investment of 70 million USD. One of our core components, the silicon carbide (SiC) wafer carr...
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  • Why do we need to do epitaxy on silicon wafer substrates?

    Why do we need to do epitaxy on silicon wafer substrates?

    In the semiconductor industry chain, especially in the third-generation semiconductor (wide bandgap semiconductor) industry chain, there are substrates and epitaxial layers. What is the significance of the epitaxial layer? What is the difference between the substrate and the substrate? The substr...
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  • Semiconductor Manufacturing Process – Etch Technology

    Semiconductor Manufacturing Process – Etch Technology

    Hundreds of processes are required to turn a wafer into a semiconductor. One of the most important processes is etching - that is, carving fine circuit patterns on the wafer. The success of the etching process depends on managing various variables within a set distribution range, and each etching...
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  • Ideal Material for Focus Rings in Plasma Etching Equipment: Silicon Carbide (SiC)

    Ideal Material for Focus Rings in Plasma Etching Equipment: Silicon Carbide (SiC)

    In plasma etching equipment, ceramic components play a crucial role, including the focus ring. The focus ring, placed around the wafer and in direct contact with it, is essential for focusing the plasma onto the wafer by applying voltage to the ring. This enhances the un...
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  • Front End of Line (FEOL): Laying the Foundation

    The front end of the production line is like laying the foundation and building the walls of a house. In semiconductor manufacturing, this stage involves creating the basic structures and transistors on a silicon wafer. Key Steps of FEOL: ...
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  • Effect of silicon carbide single crystal processing on wafer surface quality

    Effect of silicon carbide single crystal processing on wafer surface quality

    Semiconductor power devices occupy a core position in power electronic systems, especially in the context of the rapid development of technologies such as artificial intelligence, 5G communications and new energy vehicles, the performance requirements for them have been ...
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  • Key core material for SiC growth: Tantalum carbide coating

    Key core material for SiC growth: Tantalum carbide coating

    At present, the third generation of semiconductors is dominated by silicon carbide. In the cost structure of its devices, the substrate accounts for 47%, and the epitaxy accounts for 23%. The two together account for about 70%, which is the most important part of the silicon carbide device manufa...
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  • How do tantalum carbide coated products enhance the corrosion resistance of materials?

    How do tantalum carbide coated products enhance the corrosion resistance of materials?

    Tantalum carbide coating is a commonly used surface treatment technology that can significantly improve the corrosion resistance of materials. Tantalum carbide coating can be attached to the surface of the substrate through different preparation methods, such as chemical vapor deposition, physica...
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  • Yesterday, the Science and Technology Innovation Board issued an announcement that Huazhuo Precision Technology terminated its IPO!

    Just announced the delivery of the first 8-inch SIC laser annealing equipment in China, which is also Tsinghua’s technology; Why did they withdraw the materials themselves? Just a few words: First, the products are too diverse! At first glance, I don’t know what they do. At present, H...
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  • CVD silicon carbide coating-2

    CVD silicon carbide coating-2

    CVD silicon carbide coating 1. Why is there a silicon carbide coating The epitaxial layer is a specific single crystal thin film grown on the basis of the wafer through the epitaxial process. The substrate wafer and the epitaxial thin film are collectively called epitaxial wafers. Among them, the...
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  • Preparation process of SIC coating

    Preparation process of SIC coating

    At present, the preparation methods of SiC coating mainly include gel-sol method, embedding method, brush coating method, plasma spraying method, chemical vapor reaction method (CVR) and chemical vapor deposition method (CVD). Embedding methodThis method is a kind of high-temperature solid-phase ...
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  • CVD Silicon Carbide Coating-1

    CVD Silicon Carbide Coating-1

    What is CVD SiC Chemical vapor deposition (CVD) is a vacuum deposition process used to produce high-purity solid materials. This process is often used in the semiconductor manufacturing field to form thin films on the surface of wafers. In the process of preparing SiC by CVD, the substrate is exp...
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