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What is SiC coating?
Silicon Carbide (SiC) coatings are rapidly becoming essential in various high-performance applications due to their remarkable physical and chemical properties. Applied through techniques like Physical or Chemical Vapor Deposition (CVD), or spraying methods, SiC coatings transform the surface pro...Read more -
What is MOCVD Wafer Carrier?
In the field of semiconductor manufacturing, MOCVD (Metal Organic Chemical Vapor Deposition) technology is rapidly becoming a key process, with the MOCVD Wafer Carrier being one of its core components. The advancements in MOCVD Wafer Carrier are not only reflected in its manufacturing process but...Read more -
What is Tantalum Carbide?
Tantalum carbide (TaC) is a binary compound of tantalum and carbon with the chemical formula TaC x, where x usually varies between 0.4 and 1. They are extremely hard, brittle, refractory ceramic materials with metallic conductivity. They are brown-grey powders and are us...Read more -
what is tantalum carbide
Tantalum carbide (TaC) is an ultra-high temperature ceramic material with high temperature resistance, high density, high compactness; high purity, impurity content <5PPM; and chemical inertness to ammonia and hydrogen at high temperatures, and good thermal stability. The so-called ultra-high ...Read more -
What is epitaxy?
Most engineers are unfamiliar with epitaxy, which plays an important role in semiconductor device manufacturing. Epitaxy can be used in different chip products, and different products have different types of epitaxy, including Si epitaxy, SiC epitaxy, GaN epitaxy, etc. What is epitaxy?Epitaxy is...Read more -
What are the important parameters of SiC?
Silicon carbide (SiC) is an important wide bandgap semiconductor material widely used in high-power and high-frequency electronic devices. The following are some key parameters of silicon carbide wafers and their detailed explanations: Lattice Parameters:Ensure that the ...Read more -
Why does single crystal silicon need to be rolled?
Rolling refers to the process of grinding the outer diameter of a silicon single crystal rod into a single crystal rod of the required diameter using a diamond grinding wheel, and grinding out a flat edge reference surface or positioning groove of the single crystal rod. The outer diameter surfac...Read more -
Processes for Producing High-Quality SiC Powders
Silicon carbide (SiC) is an inorganic compound known for its exceptional properties. Naturally occurring SiC, known as moissanite, is quite rare. In industrial applications, silicon carbide is predominantly produced through synthetic methods.At Semicera Semiconductor, we leverage advanced techniq...Read more -
Control of radial resistivity uniformity during crystal pulling
The main reasons affecting the uniformity of radial resistivity of single crystals are the flatness of the solid-liquid interface and the small plane effect during crystal growth The influence of the flatness of the solid-liquid interface During crystal growth, if the melt is stirred evenly, the...Read more -
Why can magnetic field single crystal furnace improve the quality of single crystal
Since crucible is used as container and there is convection inside, as the size of generated single crystal increases, heat convection and temperature gradient uniformity become more difficult to control. By adding magnetic field to make the conductive melt act on Lorentz force, convection can be...Read more -
Rapid growth of SiC single crystals using CVD-SiC bulk source by sublimation method
Rapid Growth of SiC Single Crystal Using CVD-SiC Bulk Source via Sublimation MethodBy using recycled CVD-SiC blocks as the SiC source, SiC crystals were successfully grown at a rate of 1.46 mm/h through the PVT method. The grown crystal’s micropipe and dislocation densities indicate that de...Read more -
Optimized and Translated Content on Silicon Carbide Epitaxial Growth Equipment
Silicon carbide (SiC) substrates have numerous defects that prevent direct processing. To create chip wafers, a specific single-crystal film must be grown on the SiC substrate through an epitaxial process. This film is known as the epitaxial layer. Nearly all SiC devices are realized on epitaxial...Read more