Application of Silicon Carbide Ceramics in Semiconductor Field

Semiconductors:

The semiconductor industry follows the industrial law of “one generation of technology, one generation of process, and one generation of equipment”, and the upgrade and iteration of semiconductor equipment depends largely on the technological breakthrough of precision parts. Among them, precision ceramic parts are the most representative semiconductor precision parts materials, which have important applications in a series of major semiconductor manufacturing links such as chemical vapor deposition, physical vapor deposition, ion implantation, and etching. Such as bearings, guide rails, linings, electrostatic chucks, mechanical handling arms, etc. Especially inside the equipment cavity, it plays the role of support, protection, and diversion.

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Since 2023, the Netherlands and Japan have also successively issued new regulations or foreign trade decrees on control, adding export license regulations for semiconductor equipment including lithography machines, and the trend of semiconductor anti-globalization has gradually emerged. The importance of independent control of the supply chain has become increasingly prominent. Faced with the demand for localization of semiconductor equipment parts, domestic companies are actively promoting industrial development. Zhongci Electronics has realized the localization of high-tech precision parts such as heating plates and electrostatic chucks, solving the “bottleneck” problem of the domestic semiconductor equipment industry; Dezhi New Materials, a leading domestic supplier of SiC coated graphite bases and SiC etching rings, has successfully completed a financing of 100 million yuan, etc…..
High-conductivity silicon nitride ceramic substrates:

Silicon nitride ceramic substrates are mainly used in the power units, semiconductor devices and inverters of pure electric vehicles (EVs) and hybrid electric vehicles (HEVs), and have huge market potential and application prospects.

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At present, the high thermal conductivity silicon nitride ceramic substrate materials for commercial applications require thermal conductivity ≥85 W/(m·K), bending strength ≥650MPa, and fracture toughness 5~7MPa·m1/2. The companies that truly have the ability to mass-produce high thermal conductivity silicon nitride ceramic substrates are mainly Toshiba Group, Hitachi Metals, Japan Electric Chemical, Japan Maruwa and Japan Fine Ceramics.

Domestic research on silicon nitride ceramic substrate materials has also made some progress. The thermal conductivity of the silicon nitride ceramic substrate prepared by the tape-casting process of Beijing Branch of Sinoma High-Tech Nitride Ceramics Co., Ltd. is 100 W/(m·K); Beijing Sinoma Artificial Crystal Research Institute Co., Ltd. has successfully prepared a silicon nitride ceramic substrate with a bending strength of 700-800MPa, a fracture toughness ≥8MPa·m1/2, and a thermal conductivity ≥80W/(m·K) by optimizing the sintering method and process.


Post time: Oct-29-2024