Long Service Life SiC Coated Graphite Carrier For Solar Wafer

Short Description:

Silicon carbide is a new type of ceramics with high cost performance and excellent material properties. Due to features like high strength and hardness, high temperature resistance, great thermal conductivity and chemical corrosion resistance, Silicon Carbide can almost withstand all chemical medium. Therefore, SiC are widely used in oil mining, chemical, machinery and airspace, even nuclear energy and the military have their special demands on SIC. Some normal application we can offer are seal rings for pump, valve and protective armor etc.

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Product Detail

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Advantages

High temperature oxidation resistance
Excellent Corrosion resistance
Good Abrasion resistance
High coefficient of heat conductivity
Self-lubricity, low density
High hardness
Customized design.

Applications

-Wear-resistant Field: bushing, plate, sandblasting nozzle,cyclone lining, grinding barrel,etc...
-High Temperature Field: siC Slab, Quenching Furnace Tube,Radiant Tube,crucible,Heating Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC boat,Kiln car Structure,Setter,etc.
-Silicon Carbide Semiconductor: SiC wafer boat, sic chuck,sic paddle, sic cassette, sic diffusion tube, wafer fork, suction plate, guideway,etc.
-Silicon Carbide Seal Field: all kinds of sealing ring, bearing, bushing, etc.
-Photovoltaic Field: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller,etc.
-Lithium Battery Field

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WAFER (2)

Physical Properties Of SiC

Property	Value	Method
Density	3.21 g/cc	Sink-float and dimension
Specific heat	0.66 J/g °K	Pulsed laser flash
Flexural strength	450 MPa560 MPa	4 point bend, RT4 point bend, 1300°
Fracture toughness	2.94 MPa m1/2	Microindentation
Hardness	2800	Vicker’s, 500g load
Elastic ModulusYoung’s Modulus	450 GPa430 GPa	4 pt bend, RT4 pt bend, 1300 °C
Grain size	2 – 10 µm	SEM

Thermal Properties Of SiC

Thermal Conductivity	250 W/m °K	Laser flash method, RT
Thermal Expansion (CTE)	4.5 x 10-6 °K	Room temp to 950 °C, silica dilatometer

Technical Parameters

Item	Unit	Data
Item	Unit	RBSiC(SiSiC)	NBSiC	SSiC	RSiC	OSiC
SiC content	%	85	75	99	99.9	≥99
Free silicon content	%	15	0	0	0	0
Max service temperature	℃	1380	1450	1650	1620	1400
Density	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
Open porosity	%	0	13-15	0	15-18	7-8
Bending strength 20℃	Мpa	250	160	380	100	/
Bending strength 1200℃	Мpa	280	180	400	120	/
Modulus of elasticity 20℃	Gpa	330	580	420	240	/
Modulus of elasticity 1200℃	Gpa	300	/	/	200	/
Thermal conductivity 1200℃	W/m.K	45	19.6	100-120	36.6	/
Coefficient of thermal expansion	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

The CVD silicon carbide coating on the outer surface of recrystallized silicon carbide ceramic products can reach a purity of more than 99.9999% to meet the needs of customers in the semiconductor industry.