LiNbO3 Bonding wafer

Short Description:

Lithium niobate crystal has excellent electro-optical, acousto-optical, piezoelectric, and nonlinear properties. Lithium niobate crystal is an important multifunctional crystal with good nonlinear optical properties and a large nonlinear optical coefficient; it can also achieve noncritical phase matching. As an electro-optical crystal, it has been used as an important optical waveguide material; as a piezoelectric crystal, it can be used to make medium and low frequency SAW filters, high-power high-temperature resistant ultrasonic transducers, etc. Doped lithium niobate materials are also widely used.

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Semicera’s LiNbO3 Bonding Wafer is designed to meet the high demands of advanced semiconductor manufacturing. With its exceptional properties, including superior wear resistance, high thermal stability, and outstanding purity, this wafer is ideal for use in applications that require precision and long-lasting performance.

In the semiconductor industry, LiNbO3 Bonding Wafers are commonly used for bonding thin layers in optoelectronic devices, sensors, and advanced ICs. They are particularly valued in photonics and MEMS (Micro-Electromechanical Systems) due to their excellent dielectric properties and ability to withstand harsh operating conditions. Semicera’s LiNbO3 Bonding Wafer is engineered to support precise layer bonding, enhancing the overall performance and reliability of semiconductor devices.

Thermal and electrical properties of LiNbO3
Melting point	1250 ℃
Curie temperature	1140 ℃
Thermal conductivity	38 W/m/K @ 25 ℃
Coefficient of thermal expansion (@ 25°C)	//a，2.0×10^-6 /K //c，2.2×10^-6 /K
Resistivity	2×10^-6 Ω·cm @ 200 ℃
Dielectric constant	εS11/ε0=43，εT11/ε0=78 εS33/ε0=28，εT33/ε0= 2
Piezoelectric constant	D₂₂=2.04×10^-11 C/N D₃₃=19.22×10^-11 C/N
Electro-optic coefficient	γT₃₃=32 pm/V， γS₃₃=31 pm/V， γT₃₁=10 pm/V， γS₃₁=8.6 pm/V， γT₂₂=6.8 pm/V， γS₂₂=3.4 pm/V，
Half-wave voltage, DC Electric field // z, light ⊥ Z; Electric field // x or y, light ⊥ z	3.03 KV 4.02 KV

Crafted using top-quality materials, the LiNbO3 Bonding Wafer ensures consistent reliability even under extreme conditions. Its high thermal stability makes it particularly suitable for environments involving elevated temperatures, such as those found in semiconductor epitaxy processes. Additionally, the wafer's high purity ensures minimal contamination, making it a trusted choice for critical semiconductor applications.

At Semicera, we are committed to providing industry-leading solutions. Our LiNbO3 Bonding Wafer delivers unmatched durability and high-performance capabilities for applications requiring high purity, wear resistance, and thermal stability. Whether for advanced semiconductor production or other specialized technologies, this wafer serves as an essential component for cutting-edge device manufacturing.