Solid CVD SILICON CARBIDE parts are recognized as the primary choice for RTP/EPI rings and bases and plasm aetch cavity parts that operate at high system required operating temperatures (>1500℃), the requirements for purity are particularly high (>99.9995%) and the performance is especially good when the resistance to chemicals is particularly high. These materials do not contain secondary phases at the grain edge, so their components produce fewer particles than other materials. In addition, these components can be cleaned by using hot HF/HCl with little degradation, resulting in fewer particles and a longer service life.
