The High Purity CVD SiC Raw Material by Semicera is an advanced material designed for use in high-performance applications that require exceptional thermal stability, hardness, and electrical properties. Made from high-quality chemical vapor deposition (CVD) silicon carbide, this raw material provides superior purity and consistency, making it ideal for semiconductor manufacturing, high-temperature coatings, and other precision industrial applications.
Semicera’s High Purity CVD SiC Raw Material is known for its excellent resistance to wear, oxidation, and thermal shock, ensuring reliable performance even in the most demanding environments. Whether used in the production of semiconductor devices, abrasive tools, or advanced coatings, this material provides a solid foundation for high-performance applications that demand the highest standards of purity and precision.
With Semicera’s High Purity CVD SiC Raw Material, manufacturers can achieve superior product quality and operational efficiency. This material supports a range of industries, from electronics to energy, offering durability and performance that is second to none.
Semicera high-purity CVD silicon carbide raw materials have the following characteristics:
▪ High purity: extremely low impurity content, ensuring the reliability of the device.
▪ High crystallinity: perfect crystal structure, which is conducive to improving the performance of the device.
▪ Low defect density: small number of defects, reducing the leakage current of the device.
▪ Large size: large-size silicon carbide substrates can be provided to meet the needs of different customers.
▪ Customized service: different types and specifications of silicon carbide materials can be customized according to customer needs.
Product Advantages
▪ Wide Bandgap: Silicon carbide has a wide bandgap characteristic, which enables it to have excellent performance in harsh environments such as high temperature, high pressure, and high frequency.
▪ High breakdown voltage: Silicon carbide devices have a higher breakdown voltage and can manufacture higher power devices.
▪ High thermal conductivity: Silicon carbide has excellent thermal conductivity, which is conducive to the heat dissipation of the device.
▪ High electron mobility: Silicon carbide devices have a higher electron mobility, which can increase the operating frequency of the device.
