Semicera proudly offers Ga2O3 Epitaxy, a state-of-the-art solution designed to push the boundaries of power electronics and optoelectronics. This advanced epitaxial technology leverages the unique properties of Gallium Oxide (Ga2O3) to deliver superior performance in demanding applications.
Key Features:
• Exceptional Wide Bandgap: Ga2O3 Epitaxy features an ultra-wide bandgap, allowing for higher breakdown voltages and efficient operation in high-power environments.
• High Thermal Conductivity: The epitaxial layer provides excellent thermal conductivity, ensuring stable operation even under high-temperature conditions, making it ideal for high-frequency devices.
• Superior Material Quality: Achieve high crystal quality with minimal defects, ensuring optimal device performance and longevity, especially in critical applications such as power transistors and UV detectors.
• Versatility in Applications: Perfectly suited for power electronics, RF applications, and optoelectronics, providing a reliable foundation for next-generation semiconductor devices.
Discover the potential of Ga2O3 Epitaxy with Semicera’s innovative solutions. Our epitaxial products are designed to meet the highest standards of quality and performance, enabling your devices to operate with maximum efficiency and reliability. Choose Semicera for cutting-edge semiconductor technology.
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Items |
Production |
Research |
Dummy |
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Crystal Parameters |
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Polytype |
4H |
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Surface orientation error |
<11-20 >4±0.15° |
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Electrical Parameters |
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Dopant |
n-type Nitrogen |
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Resistivity |
0.015-0.025ohm·cm |
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Mechanical Parameters |
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Diameter |
150.0±0.2mm |
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Thickness |
350±25 μm |
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Primary flat orientation |
[1-100]±5° |
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Primary flat length |
47.5±1.5mm |
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Secondary flat |
None |
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TTV |
≤5 μm |
≤10 μm |
≤15 μm |
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LTV |
≤3 μm(5mm*5mm) |
≤5 μm(5mm*5mm) |
≤10 μm(5mm*5mm) |
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Bow |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
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Warp |
≤35 μm |
≤45 μm |
≤55 μm |
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Front(Si-face) roughness(AFM) |
Ra≤0.2nm (5μm*5μm) |
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Structure |
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Micropipe density |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
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Metal impurities |
≤5E10atoms/cm2 |
NA |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
NA |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
NA |
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Front Quality |
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Front |
Si |
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Surface finish |
Si-face CMP |
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Particles |
≤60ea/wafer (size≥0.3μm) |
NA |
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Scratches |
≤5ea/mm. Cumulative length ≤Diameter |
Cumulative length≤2*Diameter |
NA |
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Orange peel/pits/stains/striations/ cracks/contamination |
None |
NA |
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Edge chips/indents/fracture/hex plates |
None |
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Polytype areas |
None |
Cumulative area≤20% |
Cumulative area≤30% |
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Front laser marking |
None |
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Back Quality |
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Back finish |
C-face CMP |
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Scratches |
≤5ea/mm,Cumulative length≤2*Diameter |
NA |
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Back defects (edge chips/indents) |
None |
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Back roughness |
Ra≤0.2nm (5μm*5μm) |
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Back laser marking |
1 mm (from top edge) |
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Edge |
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Edge |
Chamfer |
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Packaging |
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Packaging |
Epi-ready with vacuum packaging Multi-wafer cassette packaging |
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*Notes： "NA" means no request Items not mentioned may refer to SEMI-STD. |
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