CVD Silicon Carbide(SiC) Rings offered by Semicera are key components in semiconductor etching, a vital stage in semiconductor device manufacturing. The composition of these CVD Silicon Carbide(SiC) Rings ensures a rugged and durable structure that can withstand the harsh conditions of the etching process. Chemical vapor deposition helps form a high-purity, uniform and dense SiC layer, giving the rings excellent mechanical strength, thermal stability and corrosion resistance.
As a key element in semiconductor manufacturing, CVD Silicon Carbide(SiC) Rings act as a protective barrier to protect the integrity of semiconductor chips. Its precise design ensures uniform and controlled etching, which helps in the manufacture of highly complex semiconductor devices, providing enhanced performance and reliability.
The use of CVD SiC material in the construction of the rings demonstrates a commitment to quality and performance in semiconductor manufacturing. This material has unique properties, including high thermal conductivity, excellent chemical inertness, and wear and corrosion resistance, making CVD Silicon Carbide(SiC) Rings an indispensable component in the pursuit of precision and efficiency in semiconductor etching processes.
Semicera's CVD Silicon Carbide (SiC) Ring represents an advanced solution in the field of semiconductor manufacturing, using the unique properties of chemical vapor deposited silicon carbide to achieve reliable and high-performance etching processes, promoting the continuous advancement of semiconductor technology. We are committed to providing customers with excellent products and professional technical support to meet the semiconductor industry's demand for high-quality and efficient etching solutions.
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Epitaxy Growth Susceptor
Silicon/silicon carbide wafers need to go through multiple processes to be used in electronic devices. An important process is silicon/sic epitaxy, in which silicon/sic wafers are carried on a graphite base. Special advantages of Semicera's silicon carbide-coated graphite base include extremely high purity, uniform coating, and extremely long service life. They also have high chemical resistance and thermal stability.
LED Chip Production
During the extensive coating of the MOCVD reactor, the planetary base or carrier moves the substrate wafer. The performance of the base material has a great influence on the coating quality, which in turn affects the scrap rate of the chip. Semicera's silicon carbide-coated base increases the manufacturing efficiency of high-quality LED wafers and minimizes wavelength deviation. We also supply additional graphite components for all MOCVD reactors currently in use. We can coat almost any component with a silicon carbide coating, even if the component diameter is up to 1.5M, we can still coat with silicon carbide.
Semiconductor Field, Oxidation Diffusion Process, Etc.
In the semiconductor process, the oxidation expansion process requires high product purity, and at Semicera we offer custom and CVD coating services for the majority of silicon carbide parts.
The following picture shows the rough-processed silicon carbide slurry of Semicea and the silicon carbide furnace tube that is cleaned in the 1000-level dust-free room. Our workers are working before coating. The purity of our silicon carbide can reach 99.99%, and the purity of sic coating is greater than 99.99995%.
Raw Silicon Carbide Paddle and SiC Process Tube in Cleaing
Silicon Carbide Wafer Boat CVD SiC Coated
