Bulk CVD SiC Ring is a bulk silicon carbide (SiC) ring material prepared by chemical vapor deposition (CVD) technology.
Bulk CVD SiC Ring has many excellent performance characteristics. First, it has a high melting point and high hardness, showing excellent high temperature resistance. This makes it have excellent stability in high temperature environments and can withstand extreme temperatures and thermal cycles. Secondly, Bulk CVD SiC Ring has excellent chemical stability and corrosion resistance, and has high resistance to corrosive media such as acids and alkalis. In addition, it also has excellent thermal conductivity and mechanical strength, which enables it to maintain stability and reliability in high temperature, high pressure and corrosive environments.
Bulk CVD SiC Ring is widely used in many fields. It is often used in high temperature process equipment such as high temperature furnaces, vacuum devices and chemical reactors as thermal isolation and protection materials. In addition, it can also be used in optoelectronics, semiconductor manufacturing, precision machinery, nuclear industry and aerospace, providing high performance environmental tolerance and reliability.
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Epitaxy Growth Susceptor
Silicon/silicon carbide wafers need to go through multiple processes to be used in electronic devices. An important process is silicon/sic epitaxy, in which silicon/sic wafers are carried on a graphite base. Special advantages of Semicera's silicon carbide-coated graphite base include extremely high purity, uniform coating, and extremely long service life. They also have high chemical resistance and thermal stability.
LED Chip Production
During the extensive coating of the MOCVD reactor, the planetary base or carrier moves the substrate wafer. The performance of the base material has a great influence on the coating quality, which in turn affects the scrap rate of the chip. Semicera's silicon carbide-coated base increases the manufacturing efficiency of high-quality LED wafers and minimizes wavelength deviation. We also supply additional graphite components for all MOCVD reactors currently in use. We can coat almost any component with a silicon carbide coating, even if the component diameter is up to 1.5M, we can still coat with silicon carbide.
Semiconductor Field, Oxidation Diffusion Process, Etc.
In the semiconductor process, the oxidation expansion process requires high product purity, and at Semicera we offer custom and CVD coating services for the majority of silicon carbide parts.
The following picture shows the rough-processed silicon carbide slurry of Semicea and the silicon carbide furnace tube that is cleaned in the 1000-level dust-free room. Our workers are working before coating. The purity of our silicon carbide can reach 99.99%, and the purity of sic coating is greater than 99.99995%.
Raw Silicon Carbide Paddle and SiC Process Tube in Cleaing
Silicon Carbide Wafer Boat CVD SiC Coated
