Semicera introduces the 850V High Power GaN-on-Si Epi Wafer, a breakthrough in semiconductor innovation. This advanced epi wafer combines the high efficiency of Gallium Nitride (GaN) with the cost-effectiveness of Silicon (Si), creating a powerful solution for high-voltage applications.
Key Features:
• High Voltage Handling: Engineered to support up to 850V, this GaN-on-Si Epi Wafer is ideal for demanding power electronics, enabling higher efficiency and performance.
• Enhanced Power Density: With superior electron mobility and thermal conductivity, GaN technology allows for compact designs and increased power density.
• Cost-Effective Solution: By leveraging silicon as the substrate, this epi wafer offers a cost-effective alternative to traditional GaN wafers, without compromising on quality or performance.
• Wide Application Range: Perfect for use in power converters, RF amplifiers, and other high-power electronic devices, ensuring reliability and durability.
Explore the future of high-voltage technology with Semicera’s 850V High Power GaN-on-Si Epi Wafer. Designed for cutting-edge applications, this product ensures your electronic devices operate with maximum efficiency and reliability. Choose Semicera for your next-generation semiconductor needs.
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Items |
Production |
Research |
Dummy |
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Crystal Parameters |
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Polytype |
4H |
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Surface orientation error |
<11-20 >4±0.15° |
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Electrical Parameters |
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Dopant |
n-type Nitrogen |
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Resistivity |
0.015-0.025ohm·cm |
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Mechanical Parameters |
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Diameter |
150.0±0.2mm |
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Thickness |
350±25 μm |
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Primary flat orientation |
[1-100]±5° |
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Primary flat length |
47.5±1.5mm |
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Secondary flat |
None |
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TTV |
≤5 μm |
≤10 μm |
≤15 μm |
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LTV |
≤3 μm(5mm*5mm) |
≤5 μm(5mm*5mm) |
≤10 μm(5mm*5mm) |
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Bow |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
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Warp |
≤35 μm |
≤45 μm |
≤55 μm |
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Front(Si-face) roughness(AFM) |
Ra≤0.2nm (5μm*5μm) |
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Structure |
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Micropipe density |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
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Metal impurities |
≤5E10atoms/cm2 |
NA |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
NA |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
NA |
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Front Quality |
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Front |
Si |
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Surface finish |
Si-face CMP |
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Particles |
≤60ea/wafer (size≥0.3μm) |
NA |
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Scratches |
≤5ea/mm. Cumulative length ≤Diameter |
Cumulative length≤2*Diameter |
NA |
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Orange peel/pits/stains/striations/ cracks/contamination |
None |
NA |
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Edge chips/indents/fracture/hex plates |
None |
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Polytype areas |
None |
Cumulative area≤20% |
Cumulative area≤30% |
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Front laser marking |
None |
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Back Quality |
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Back finish |
C-face CMP |
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Scratches |
≤5ea/mm,Cumulative length≤2*Diameter |
NA |
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Back defects (edge chips/indents) |
None |
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Back roughness |
Ra≤0.2nm (5μm*5μm) |
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Back laser marking |
1 mm (from top edge) |
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Edge |
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Edge |
Chamfer |
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Packaging |
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Packaging |
Epi-ready with vacuum packaging Multi-wafer cassette packaging |
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*Notes： "NA" means no request Items not mentioned may refer to SEMI-STD. |
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