8 Inch N-type SiC Wafer

Short Description:

Semicera’s 8 Inch N-type SiC Wafers are engineered for cutting-edge applications in high-power and high-frequency electronics. These wafers provide superior electrical and thermal properties, ensuring efficient performance in demanding environments. Semicera delivers innovation and reliability in semiconductor materials.


Product Detail

Product Tags

Semicera’s 8 Inch N-type SiC Wafers are at the forefront of semiconductor innovation, providing a solid base for the development of high-performance electronic devices. These wafers are designed to meet the rigorous demands of modern electronic applications, from power electronics to high-frequency circuits.

The N-type doping in these SiC wafers enhances their electrical conductivity, making them ideal for a wide range of applications, including power diodes, transistors, and amplifiers. The superior conductivity ensures minimal energy loss and efficient operation, which are critical for devices operating at high frequencies and power levels.

Semicera employs advanced manufacturing techniques to produce SiC wafers with exceptional surface uniformity and minimal defects. This level of precision is essential for applications that require consistent performance and durability, such as in aerospace, automotive, and telecommunications industries.

Incorporating Semicera’s 8 Inch N-type SiC Wafers into your production line provides a foundation for creating components that can withstand harsh environments and high temperatures. These wafers are perfect for applications in power conversion, RF technology, and other demanding fields.

Choosing Semicera’s 8 Inch N-type SiC Wafers means investing in a product that combines high-quality material science with precise engineering. Semicera is committed to advancing the capabilities of semiconductor technologies, offering solutions that enhance the efficiency and reliability of your electronic devices.

Items

Production

Research

Dummy

Crystal Parameters

Polytype

4H

Surface orientation error

<11-20 >4±0.15°

Electrical Parameters

Dopant

n-type Nitrogen

Resistivity

0.015-0.025ohm·cm

Mechanical Parameters

Diameter

150.0±0.2mm

Thickness

350±25 μm

Primary flat orientation

[1-100]±5°

Primary flat length

47.5±1.5mm

Secondary flat

None

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Bow

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Structure

Micropipe density

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metal impurities

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Front Quality

Front

Si

Surface finish

Si-face CMP

Particles

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Cumulative length ≤Diameter

Cumulative length≤2*Diameter

NA

Orange peel/pits/stains/striations/ cracks/contamination

None

NA

Edge chips/indents/fracture/hex plates

None

Polytype areas

None

Cumulative area≤20%

Cumulative area≤30%

Front laser marking

None

Back Quality

Back finish

C-face CMP

Scratches

≤5ea/mm,Cumulative length≤2*Diameter

NA

Back defects (edge chips/indents)

None

Back roughness

Ra≤0.2nm (5μm*5μm)

Back laser marking

1 mm (from top edge)

Edge

Edge

Chamfer

Packaging

Packaging

Epi-ready with vacuum packaging

Multi-wafer cassette packaging

*Notes: "NA" means no request Items not mentioned may refer to SEMI-STD.

tech_1_2_size
SiC wafers

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