Semicera’s 8 Inch N-type SiC Wafers are at the forefront of semiconductor innovation, providing a solid base for the development of high-performance electronic devices. These wafers are designed to meet the rigorous demands of modern electronic applications, from power electronics to high-frequency circuits.
The N-type doping in these SiC wafers enhances their electrical conductivity, making them ideal for a wide range of applications, including power diodes, transistors, and amplifiers. The superior conductivity ensures minimal energy loss and efficient operation, which are critical for devices operating at high frequencies and power levels.
Semicera employs advanced manufacturing techniques to produce SiC wafers with exceptional surface uniformity and minimal defects. This level of precision is essential for applications that require consistent performance and durability, such as in aerospace, automotive, and telecommunications industries.
Incorporating Semicera’s 8 Inch N-type SiC Wafers into your production line provides a foundation for creating components that can withstand harsh environments and high temperatures. These wafers are perfect for applications in power conversion, RF technology, and other demanding fields.
Choosing Semicera’s 8 Inch N-type SiC Wafers means investing in a product that combines high-quality material science with precise engineering. Semicera is committed to advancing the capabilities of semiconductor technologies, offering solutions that enhance the efficiency and reliability of your electronic devices.
Items |
Production |
Research |
Dummy |
Crystal Parameters |
|||
Polytype |
4H |
||
Surface orientation error |
<11-20 >4±0.15° |
||
Electrical Parameters |
|||
Dopant |
n-type Nitrogen |
||
Resistivity |
0.015-0.025ohm·cm |
||
Mechanical Parameters |
|||
Diameter |
150.0±0.2mm |
||
Thickness |
350±25 μm |
||
Primary flat orientation |
[1-100]±5° |
||
Primary flat length |
47.5±1.5mm |
||
Secondary flat |
None |
||
TTV |
≤5 μm |
≤10 μm |
≤15 μm |
LTV |
≤3 μm(5mm*5mm) |
≤5 μm(5mm*5mm) |
≤10 μm(5mm*5mm) |
Bow |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
Warp |
≤35 μm |
≤45 μm |
≤55 μm |
Front(Si-face) roughness(AFM) |
Ra≤0.2nm (5μm*5μm) |
||
Structure |
|||
Micropipe density |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
Metal impurities |
≤5E10atoms/cm2 |
NA |
|
BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
NA |
TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
NA |
Front Quality |
|||
Front |
Si |
||
Surface finish |
Si-face CMP |
||
Particles |
≤60ea/wafer (size≥0.3μm) |
NA |
|
Scratches |
≤5ea/mm. Cumulative length ≤Diameter |
Cumulative length≤2*Diameter |
NA |
Orange peel/pits/stains/striations/ cracks/contamination |
None |
NA |
|
Edge chips/indents/fracture/hex plates |
None |
||
Polytype areas |
None |
Cumulative area≤20% |
Cumulative area≤30% |
Front laser marking |
None |
||
Back Quality |
|||
Back finish |
C-face CMP |
||
Scratches |
≤5ea/mm,Cumulative length≤2*Diameter |
NA |
|
Back defects (edge chips/indents) |
None |
||
Back roughness |
Ra≤0.2nm (5μm*5μm) |
||
Back laser marking |
1 mm (from top edge) |
||
Edge |
|||
Edge |
Chamfer |
||
Packaging |
|||
Packaging |
Epi-ready with vacuum packaging Multi-wafer cassette packaging |
||
*Notes: "NA" means no request Items not mentioned may refer to SEMI-STD. |