6 Inch N-type SiC Wafer

Short Description:

Semicera’s 6 Inch N-type SiC Wafer offers outstanding thermal conductivity and high electric field strength, making it a superior choice for power and RF devices. This wafer, tailored to meet industry demands, exemplifies Semicera’s commitment to quality and innovation in semiconductor materials.


Product Detail

Product Tags

Semicera’s 6 Inch N-type SiC Wafer stands at the forefront of semiconductor technology. Crafted for optimal performance, this wafer excels in high-power, high-frequency, and high-temperature applications, essential for advanced electronic devices.

Our 6 Inch N-type SiC wafer features high electron mobility and low on-resistance, which are critical parameters for power devices such as MOSFETs, diodes, and other components. These properties ensure efficient energy conversion and reduced heat generation, enhancing the performance and lifespan of electronic systems.

Semicera’s rigorous quality control processes ensure that each SiC wafer maintains excellent surface flatness and minimal defects. This meticulous attention to detail ensures that our wafers meet the stringent requirements of industries such as automotive, aerospace, and telecommunications.

In addition to its superior electrical properties, the N-type SiC wafer offers robust thermal stability and resistance to high temperatures, making it ideal for environments where conventional materials might fail. This capability is particularly valuable in applications involving high-frequency and high-power operations.

By choosing Semicera’s 6 Inch N-type SiC Wafer, you are investing in a product that represents the pinnacle of semiconductor innovation. We are committed to providing the building blocks for cutting-edge devices, ensuring that our partners in various industries have access to the best materials for their technological advancements.

Items

Production

Research

Dummy

Crystal Parameters

Polytype

4H

Surface orientation error

<11-20 >4±0.15°

Electrical Parameters

Dopant

n-type Nitrogen

Resistivity

0.015-0.025ohm·cm

Mechanical Parameters

Diameter

150.0±0.2mm

Thickness

350±25 μm

Primary flat orientation

[1-100]±5°

Primary flat length

47.5±1.5mm

Secondary flat

None

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Bow

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Structure

Micropipe density

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metal impurities

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Front Quality

Front

Si

Surface finish

Si-face CMP

Particles

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Cumulative length ≤Diameter

Cumulative length≤2*Diameter

NA

Orange peel/pits/stains/striations/ cracks/contamination

None

NA

Edge chips/indents/fracture/hex plates

None

Polytype areas

None

Cumulative area≤20%

Cumulative area≤30%

Front laser marking

None

Back Quality

Back finish

C-face CMP

Scratches

≤5ea/mm,Cumulative length≤2*Diameter

NA

Back defects (edge chips/indents)

None

Back roughness

Ra≤0.2nm (5μm*5μm)

Back laser marking

1 mm (from top edge)

Edge

Edge

Chamfer

Packaging

Packaging

Epi-ready with vacuum packaging

Multi-wafer cassette packaging

*Notes: "NA" means no request Items not mentioned may refer to SEMI-STD.

tech_1_2_size
SiC wafers

  • Previous:
  • Next: