4 Inch SiC Substrate N-type

Short Description:

Semicera offers a wide range of 4H-8H SiC wafers. For many years, we have been a manufacturer and supplier of products to the semiconductor and photovoltaic industries. Our main products include: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, as well as CVD SiC coatings and TaC coatings. Covering most European and American markets. We look forward to being your long-term partner in China.

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Product Detail

Product Tags

Silicon carbide (SiC) single crystal material has a large band gap width (~Si 3 times), high thermal conductivity (~Si 3.3 times or GaAs 10 times), high electron saturation migration rate (~Si 2.5 times), high breakdown electric field (~Si 10 times or GaAs 5 times) and other outstanding characteristics.

Semicera energy can provide customers with high-quality Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; In addition, we can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets; We can also customize the epitaxial sheet according to the specific needs of customers, and there is no minimum order quantity.

Items	Production	Research	Dummy
Crystal Parameters
Polytype	4H
Surface orientation error	<11-20 >4±0.15°
Electrical Parameters
Dopant	n-type Nitrogen
Resistivity	0.015-0.025ohm·cm
Mechanical Parameters
Diameter	99.5 - 100mm
Thickness	350±25 μm
Primary flat orientation	[1-100]±5°
Primary flat length	32.5±1.5mm
Secondary flat position	90° CW from primary flat ±5°. silicon face up
Secondary flat length	18±1.5mm
TTV	≤5 μm	≤10 μm	≤20 μm
LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	NA
Bow	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤20 μm	≤45 μm	≤50 μm
Front(Si-face) roughness(AFM)	Ra≤0.2nm (5μm*5μm)
Structure
Micropipe density	≤1 ea/cm2	≤5 ea/cm2	≤10 ea/cm2
Metal impurities	≤5E10atoms/cm2		NA
BPD	≤1500 ea/cm2	≤3000 ea/cm2	NA
TSD	≤500 ea/cm2	≤1000 ea/cm2	NA
Front Quality
Front	Si
Surface finish	Si-face CMP
Particles	≤60ea/wafer (size≥0.3μm)	NA
Scratches	≤2ea/mm. Cumulative length ≤Diameter	Cumulative length≤2*Diameter	NA
Orange peel/pits/stains/striations/ cracks/contamination	None		NA
Edge chips/indents/fracture/hex plates	None		NA
Polytype areas	None	Cumulative area≤20%	Cumulative area≤30%
Front laser marking	None
Back Quality
Back finish	C-face CMP
Scratches	≤5ea/mm,Cumulative length≤2*Diameter	NA
Back defects (edge chips/indents)	None
Back roughness	Ra≤0.2nm (5μm*5μm)
Back laser marking	1 mm (from top edge)
Edge
Edge	Chamfer
Packaging
Packaging	The inner bag is filled with nitrogen and the outer bag is vacuumed. Multi-wafer cassette, epi-ready.
*Notes： "NA" means no request Items not mentioned may refer to SEMI-STD.