Semicera's 4" 6" Semi-Insulating SiC Substrate is a high-quality material designed to meet the stringent requirements of RF and power device applications. The substrate combines the excellent thermal conductivity and high breakdown voltage of silicon carbide with semi-insulating properties, making it an ideal choice for developing advanced semiconductor devices.
4" 6" Semi-Insulating SiC Substrate is carefully manufactured to ensure high purity material and consistent semi-insulating performance. This ensures that the substrate provides the necessary electrical isolation in RF devices such as amplifiers and transistors, while also providing the thermal efficiency required for high-power applications. The result is a versatile substrate that can be used in a wide range of high-performance electronic products.
Semicera recognizes the importance of providing reliable, defect-free substrates for critical semiconductor applications. Our 4" 6" Semi-Insulating SiC Substrate is produced using advanced manufacturing techniques that minimize crystal defects and improve material uniformity. This enables the product to support the manufacture of devices with enhanced performance, stability, and lifetime.
Semicera's commitment to quality ensures our 4" 6" Semi-Insulating SiC Substrate delivers reliable and consistent performance across a wide range of applications. Whether you are developing high-frequency devices or energy-efficient power solutions, our semi-insulating SiC substrates provide the foundation for the success of next-generation electronics.
Basic parameters
|
Size |
6-inch | 4-inch |
| Diameter | 150.0mm+0mm/-0.2mm | 100.0mm+0mm/-0.5mm |
| Surface Orientation | {0001}±0.2° | |
| Primary Flat Orientation | / | <1120>±5° |
| SecondaryFlat Orientation | / | Silicon face up:90° CW from Prime flat士5° |
| Primary Flat Length | / | 32.5 mm 士2.0 mm |
| Secondary Flat Length | / | 18.0 mm士2.0 mm |
| Notch Orientation | <1100>±1.0° | / |
| Notch Orientation | 1.0mm+0.25 mm/-0.00 mm | / |
| Notch Angle | 90°+5°/-1° | / |
| Thickness | 500.0um士25.0um | |
| Conductive Type | Semi-insulating | |
Crystal quality information
| ltem | 6-inch | 4-inch |
| Resistivity | ≥1E9Q·cm | |
| Polytype | None permitted | |
| Micropipe Density | ≤0.5/cm2 | ≤0.3/cm2 |
| Hex Plates by high intensity light | None permitted | |
| Visual Carbon Inclusions by high | Cumulative area≤0.05% | |
Resistivity－Tested by Non-contact sheet resistance.
Micropipe Density
