4″6″ 8″ N-type SiC Ingot

Short Description:

Semicera’s 4″, 6″, and 8″ N-type SiC Ingots are the cornerstone for high-power and high-frequency semiconductor devices. Offering superior electrical properties and thermal conductivity, these ingots are crafted to support the production of reliable and efficient electronic components. Trust Semicera for unmatched quality and performance.


Product Detail

Product Tags

Semicera’s 4", 6", and 8" N-type SiC Ingots represent a breakthrough in semiconductor materials, designed to meet the increasing demands of modern electronic and power systems. These ingots provide a robust and stable foundation for various semiconductor applications, ensuring optimal performance and longevity.

Our N-type SiC ingots are produced using advanced manufacturing processes that enhance their electrical conductivity and thermal stability. This makes them ideal for high-power and high-frequency applications, such as inverters, transistors, and other power electronic devices where efficiency and reliability are paramount.

The precise doping of these ingots ensures that they offer consistent and repeatable performance. This consistency is critical for developers and manufacturers who are pushing the boundaries of technology in fields like aerospace, automotive, and telecommunications. Semicera’s SiC ingots enable the production of devices that operate efficiently under extreme conditions.

Choosing Semicera’s N-type SiC Ingots means integrating materials that can handle high temperatures and high electrical loads with ease. These ingots are particularly suited for creating components that require excellent thermal management and high-frequency operation, such as RF amplifiers and power modules.

By opting for Semicera’s 4", 6", and 8" N-type SiC Ingots, you are investing in a product that combines exceptional material properties with the precision and reliability demanded by cutting-edge semiconductor technologies. Semicera continues to lead the industry by providing innovative solutions that drive the advancement of electronic device manufacturing. 

Items

Production

Research

Dummy

Crystal Parameters

Polytype

4H

Surface orientation error

<11-20 >4±0.15°

Electrical Parameters

Dopant

n-type Nitrogen

Resistivity

0.015-0.025ohm·cm

Mechanical Parameters

Diameter

150.0±0.2mm

Thickness

350±25 μm

Primary flat orientation

[1-100]±5°

Primary flat length

47.5±1.5mm

Secondary flat

None

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Bow

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Structure

Micropipe density

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metal impurities

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Front Quality

Front

Si

Surface finish

Si-face CMP

Particles

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Cumulative length ≤Diameter

Cumulative length≤2*Diameter

NA

Orange peel/pits/stains/striations/ cracks/contamination

None

NA

Edge chips/indents/fracture/hex plates

None

Polytype areas

None

Cumulative area≤20%

Cumulative area≤30%

Front laser marking

None

Back Quality

Back finish

C-face CMP

Scratches

≤5ea/mm,Cumulative length≤2*Diameter

NA

Back defects (edge chips/indents)

None

Back roughness

Ra≤0.2nm (5μm*5μm)

Back laser marking

1 mm (from top edge)

Edge

Edge

Chamfer

Packaging

Packaging

Epi-ready with vacuum packaging

Multi-wafer cassette packaging

*Notes: "NA" means no request Items not mentioned may refer to SEMI-STD.

tech_1_2_size
SiC wafers

  • Previous:
  • Next: