Silicon Carbide Coated Graphite Susceptor Wafer Carrier

High-Quality 4H-SiC Substrate Available in 2~6 Inch Sizes

Semicera Semiconductor Technology Co., Ltd. is a leading manufacturer and supplier of 4H-SiC substrates in China. Our state-of-the-art factory produces high-quality 4H-SiC substrates in various sizes, including 2~6 inch substrates, to meet the diverse needs of our customers. Our 4H-SiC substrates are known for their superior material properties, including high electron mobility, high thermal conductivity, and high breakdown electric field strength. These substrates are widely used in the fabrication of high-power and high-frequency devices, such as power electronics, RF devices, and sensors. With our advanced production technology and strict quality control, we guarantee that our 4H-SiC substrates meet the highest standards for performance and reliability. By choosing Semicera Semiconductor Technology Co., Ltd. as your supplier, you can rely on our expertise and commitment to delivering the best semiconductor materials for your applications. Contact us today to learn more about our 4H-SiC substrates and how we can support your semiconductor needs.

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