Silicon Carbide Coated Graphite Susceptor Wafer Carrier

High-Quality 2-6 Inch 4° Off-Angle P-Type 4H-SiC Substrate Supplier

Semicera Semiconductor Technology Co., Ltd. is a leading manufacturer and supplier of high-quality semiconductor products in China. Our latest offering, the 2~6 inch 4° off-angle P-type 4H-SiC substrate, is a cutting-edge product designed to meet the demanding requirements of the semiconductor industry. Featuring a 4° off-angle design, this P-type 4H-SiC substrate provides superior electrical properties and improved performance for a wide range of applications. With a size range of 2 to 6 inches, this substrate offers versatility and flexibility for various semiconductor manufacturing processes. As a trusted factory, Semicera Semiconductor Technology Co., Ltd. ensures the highest standards of quality and reliability in all our products. Our P-type 4H-SiC substrates are meticulously manufactured using state-of-the-art technology and stringent quality control measures, making them the ideal choice for semiconductor device fabrication. Whether you are in the research and development phase or mass production, our 2~6 inch 4° off-angle P-type 4H-SiC substrate is the perfect solution for your semiconductor needs. Contact us today to learn more about this innovative product.

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