2″ Gallium Oxide Substrates

Short Description:

2″ Gallium Oxide Substrates – Optimize your semiconductor devices with Semicera’s high-quality 2″ Gallium Oxide Substrates, engineered for superior performance in power electronics and UV applications.


Product Detail

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Semicera is excited to offer 2" Gallium Oxide Substrates, a cutting-edge material designed to enhance the performance of advanced semiconductor devices. These substrates, made from Gallium Oxide (Ga2O3), feature an ultra-wide bandgap, making them an ideal choice for high-power, high-frequency, and UV optoelectronic applications.

 

Key Features:

       •  Ultra-Wide Bandgap: The 2" Gallium Oxide Substrates provide an outstanding bandgap of approximately 4.8 eV, allowing for higher voltage and temperature operation, far exceeding the capabilities of traditional semiconductor materials like silicon.

       •  Exceptional Breakdown Voltage: These substrates enable devices to handle significantly higher voltages, making them perfect for power electronics, especially in high-voltage applications.

       •  Excellent Thermal Conductivity: With superior thermal stability, these substrates maintain consistent performance even in extreme thermal environments, ideal for high-power and high-temperature applications.

       •  High-Quality Material: The 2" Gallium Oxide Substrates offer low defect densities and high crystalline quality, ensuring the reliable and efficient performance of your semiconductor devices.

       •  Versatile Applications: These substrates are suited for a range of applications, including power transistors, Schottky diodes, and UV-C LED devices, offering a robust foundation for both power and optoelectronic innovations.

 

Unlock the full potential of your semiconductor devices with Semicera’s 2" Gallium Oxide Substrates. Our substrates are designed to meet the demanding needs of today’s advanced applications, ensuring high performance, reliability, and efficiency. Choose Semicera for state-of-the-art semiconductor materials that drive innovation.

Items

Production

Research

Dummy

Crystal Parameters

Polytype

4H

Surface orientation error

<11-20 >4±0.15°

Electrical Parameters

Dopant

n-type Nitrogen

Resistivity

0.015-0.025ohm·cm

Mechanical Parameters

Diameter

150.0±0.2mm

Thickness

350±25 μm

Primary flat orientation

[1-100]±5°

Primary flat length

47.5±1.5mm

Secondary flat

None

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Bow

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Structure

Micropipe density

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metal impurities

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Front Quality

Front

Si

Surface finish

Si-face CMP

Particles

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Cumulative length ≤Diameter

Cumulative length≤2*Diameter

NA

Orange peel/pits/stains/striations/ cracks/contamination

None

NA

Edge chips/indents/fracture/hex plates

None

Polytype areas

None

Cumulative area≤20%

Cumulative area≤30%

Front laser marking

None

Back Quality

Back finish

C-face CMP

Scratches

≤5ea/mm,Cumulative length≤2*Diameter

NA

Back defects (edge chips/indents)

None

Back roughness

Ra≤0.2nm (5μm*5μm)

Back laser marking

1 mm (from top edge)

Edge

Edge

Chamfer

Packaging

Packaging

Epi-ready with vacuum packaging

Multi-wafer cassette packaging

*Notes: "NA" means no request Items not mentioned may refer to SEMI-STD.

tech_1_2_size
SiC wafers

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