Semicera is excited to offer 2" Gallium Oxide Substrates, a cutting-edge material designed to enhance the performance of advanced semiconductor devices. These substrates, made from Gallium Oxide (Ga2O3), feature an ultra-wide bandgap, making them an ideal choice for high-power, high-frequency, and UV optoelectronic applications.
Key Features:
• Ultra-Wide Bandgap: The 2" Gallium Oxide Substrates provide an outstanding bandgap of approximately 4.8 eV, allowing for higher voltage and temperature operation, far exceeding the capabilities of traditional semiconductor materials like silicon.
• Exceptional Breakdown Voltage: These substrates enable devices to handle significantly higher voltages, making them perfect for power electronics, especially in high-voltage applications.
• Excellent Thermal Conductivity: With superior thermal stability, these substrates maintain consistent performance even in extreme thermal environments, ideal for high-power and high-temperature applications.
• High-Quality Material: The 2" Gallium Oxide Substrates offer low defect densities and high crystalline quality, ensuring the reliable and efficient performance of your semiconductor devices.
• Versatile Applications: These substrates are suited for a range of applications, including power transistors, Schottky diodes, and UV-C LED devices, offering a robust foundation for both power and optoelectronic innovations.
Unlock the full potential of your semiconductor devices with Semicera’s 2" Gallium Oxide Substrates. Our substrates are designed to meet the demanding needs of today’s advanced applications, ensuring high performance, reliability, and efficiency. Choose Semicera for state-of-the-art semiconductor materials that drive innovation.
Items |
Production |
Research |
Dummy |
Crystal Parameters |
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Polytype |
4H |
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Surface orientation error |
<11-20 >4±0.15° |
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Electrical Parameters |
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Dopant |
n-type Nitrogen |
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Resistivity |
0.015-0.025ohm·cm |
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Mechanical Parameters |
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Diameter |
150.0±0.2mm |
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Thickness |
350±25 μm |
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Primary flat orientation |
[1-100]±5° |
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Primary flat length |
47.5±1.5mm |
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Secondary flat |
None |
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TTV |
≤5 μm |
≤10 μm |
≤15 μm |
LTV |
≤3 μm(5mm*5mm) |
≤5 μm(5mm*5mm) |
≤10 μm(5mm*5mm) |
Bow |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
Warp |
≤35 μm |
≤45 μm |
≤55 μm |
Front(Si-face) roughness(AFM) |
Ra≤0.2nm (5μm*5μm) |
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Structure |
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Micropipe density |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
Metal impurities |
≤5E10atoms/cm2 |
NA |
|
BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
NA |
TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
NA |
Front Quality |
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Front |
Si |
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Surface finish |
Si-face CMP |
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Particles |
≤60ea/wafer (size≥0.3μm) |
NA |
|
Scratches |
≤5ea/mm. Cumulative length ≤Diameter |
Cumulative length≤2*Diameter |
NA |
Orange peel/pits/stains/striations/ cracks/contamination |
None |
NA |
|
Edge chips/indents/fracture/hex plates |
None |
||
Polytype areas |
None |
Cumulative area≤20% |
Cumulative area≤30% |
Front laser marking |
None |
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Back Quality |
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Back finish |
C-face CMP |
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Scratches |
≤5ea/mm,Cumulative length≤2*Diameter |
NA |
|
Back defects (edge chips/indents) |
None |
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Back roughness |
Ra≤0.2nm (5μm*5μm) |
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Back laser marking |
1 mm (from top edge) |
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Edge |
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Edge |
Chamfer |
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Packaging |
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Packaging |
Epi-ready with vacuum packaging Multi-wafer cassette packaging |
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*Notes: "NA" means no request Items not mentioned may refer to SEMI-STD. |