2~6 inch 4° off-angle P-type 4H-SiC substrate

Semicera’s 2~6 inch 4° off-angle P-type 4H-SiC substrates are engineered to meet the growing needs of high-performance power and RF device manufacturers. The 4° off-angle orientation ensures optimized epitaxial growth, making this substrate an ideal foundation for a range of semiconductor devices, including MOSFETs, IGBTs, and diodes.

This 2~6 inch 4° off-angle P-type 4H-SiC substrate has excellent material properties, including high thermal conductivity, excellent electrical performance, and outstanding mechanical stability. The off-angle orientation helps reduce micropipe density and promotes smoother epitaxial layers, which is critical to improving the performance and reliability of the final semiconductor device.

Semicera’s 2~6 inch 4° off-angle P-type 4H-SiC substrates are available in a variety of diameters, ranging from 2 inches to 6 inches, to meet different manufacturing requirements. Our substrates are precisely engineered to provide uniform doping levels and high-quality surface characteristics, ensuring that each wafer meets the stringent specifications required for advanced electronic applications.

Semicera's commitment to innovation and quality ensures that our 2~6 inch 4° off-angle P-type 4H-SiC substrates deliver consistent performance in a wide range of applications from power electronics to high-frequency devices. This product provides a reliable solution for the next generation of energy-efficient, high-performance semiconductors, supporting technological advancements in industries such as automotive, telecommunications, and renewable energy.